Resumo

BRITO DEL PINO, Jose; BRITO DEL PINO, Felipe  e  BRITO DEL PINO, Moshe. Non-destructive Inspection of Voids on Power MOSFET’s. Novasinergia [online]. 2019, vol.2, n.1, pp.41-49.  Epub 06-Jun-2019. ISSN 2631-2654.  https://doi.org/10.37135/unach.ns.001.03.05.

Voids can affect the normal function on Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET’s) if they are over 25% of the total area, this being an important feature in the quality control of voids on the manufacturing process. The experimental method was employed using the Scanning Electron Microscopy with Energy Dispersive Spectroscopy (SEM-EDS) and microtomography techniques. The scanning electron microscopy with energy dispersive spectroscopy method permitted the quantification of the chemical and physical characteristics of the solder layer in each device. The microtomography method has been employed as a Non-Destructive Inspection (NDI) method on Power MOSFET’s to quantify the voids. The research methodology permitted the quantification of the voids with the aim of inspecting the manufacturing imperfections which can influence the performance of the device. The object-oriented programming was developed using LabView software which allowed improving the voids detection from an image with distortion, quantifying microvoids and macrovoids, locating in the solder layer using the voiding mass center and obtaining the statistic result. The results of analyzing voids demonstrated that the technique and the methodologies employed for this type of defect detection in Power MOSFET’s could represent a suitable NDI tool for quality control.

Palavras-chave : Power MOSFET’s; Quality Control; Software; Tomography; Voids.

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